Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD48 NPN/PNP resistor-equipped transistors
Product Specification 1999 Apr 22
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
FEATURES • Transistors with different polarity and built-in bias resistors R1 (typ. 47 and 47 kΩ) and R2 (typ. 2.2 and 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 plastic package. Fig.2 Equivalent inverter symbol.
2, 5 1, 4
MBK120
PUMD48
handbook, halfpage
6 5 4 R1 TR1 R2
5
4
6
R2 TR2 R1
1 Top view
2
3
MAM343
1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
PINNING PIN 1, 4
6, 3
DESCRIPTION emitter base collector TR1; TR2 TR1; TR2 TR1; TR2
2, 5 6, 3
MARKING TYPE NUMBER PUMD48 MARKING CODE 4t8
1999 Apr 22
2
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS − − − − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C − MIN.
PUMD48
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage TR1 positive negative input voltage TR2 positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Notes 1. Refer to SC-88 standard mounting conditions. total power dissipation 300 mW output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature +5 −12 100 100 200 +150 150 +150 V V mA mA mW °C °C °C +40 −10 V V open emitter open base open collector 50 50 10 V V V
1999 Apr 22
3
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-88 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − − − − 80 − − 3 33 0.8 IE = ie = 0; VCB = 10 V; f = 1 MHz − IC = 0; VEB = −5 V IC = −10 mA; VCE = −5 V IC = −100 µA; VCE = −5 V IC = −5 mA; VCE = −0.3 V − 100 − − −1.1 1.54 17 IE = ie = 0; VCB = −10 V; f = 1 MHz − TYP. − − − − − − 1.2 1.6 47 1 − − − − −0.6 −0.75 2.2 21 − PARAMETER CONDITIONS VALUE 416
PUMD48
UNIT K/W
thermal resistance from junction to ambient note 1
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity ICBO ICEO collector cut-off current collector cut-off current IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C Transistor TR1 (NPN) IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 100 µA; VCE = 5 V IC = 2 mA; VCE = 0.3 V 90 − 150 0.8 − 61 1.2 2.5 pF µA mV V V kΩ mV V V kΩ µA 100 1 50 nA µA µA
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
Transistor TR2 (PNP) emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance 180 − −100 −0.5 − 2.86 26 3 pF
collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA
1999 Apr 22
4
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
PUMD48
103 handbook, halfpage
(2)
MDA973
10−1 handbook, halfpage VCEsat (V)
(1) (2) (3)
MDA972
hFE
(1)
102
(3)
10
1 10−1
1
10
IC (mA)
102
10−2 −1 10
1
10
IC (mA)
102
TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C.
TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
handbook, halfpage
10
MDA975
102 handbook, halfpage Vi(on)
MDA974
Vi(off) (V)
(V) 10
(1)
1
(2) (3) (1)
1
(3) (2)
10−1 10−2
10−1
1
IC (mA)
10
10−1 10−1
1
10
IC (mA)
102
TR1 (NPN); VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.
TR1 (NPN); VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.
Fig.5
Input-off voltage as a function of collector current; typical values.
Fig.6
Input-on voltage as a function of collector current; typical values.
1999 Apr 22
5
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
PUMD48
103 handbook, halfpage hFE
(1) (2)
MDA977
−103 handbook, halfpage
MDA976
VCEsat (mV)
(3)
102
−102
10
(1)
(3) (2)
1 −10−1
−1
−10
IC (mA)
−102
−10 −10−1
−1
−10
IC (mA)
−102
TR2 (PNP); VCE = −5 V. (1) Tamb = 100 °C. (.