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PUMD48 Dataheets PDF



Part Number PUMD48
Manufacturers NXP
Logo NXP
Description NPN/PNP resistor-equipped transistors
Datasheet PUMD48 DatasheetPUMD48 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD48 NPN/PNP resistor-equipped transistors Product Specification 1999 Apr 22 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors FEATURES • Transistors with different polarity and built-in bias resistors R1 (typ. 47 and 47 kΩ) and R2 (typ. 2.2 and 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Espe.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD48 NPN/PNP resistor-equipped transistors Product Specification 1999 Apr 22 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors FEATURES • Transistors with different polarity and built-in bias resistors R1 (typ. 47 and 47 kΩ) and R2 (typ. 2.2 and 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 plastic package. Fig.2 Equivalent inverter symbol. 2, 5 1, 4 MBK120 PUMD48 handbook, halfpage 6 5 4 R1 TR1 R2 5 4 6 R2 TR2 R1 1 Top view 2 3 MAM343 1 2 3 Fig.1 Simplified outline (SC-88) and symbol. PINNING PIN 1, 4 6, 3 DESCRIPTION emitter base collector TR1; TR2 TR1; TR2 TR1; TR2 2, 5 6, 3 MARKING TYPE NUMBER PUMD48 MARKING CODE 4t8 1999 Apr 22 2 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS − − − − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C − MIN. PUMD48 MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage TR1 positive negative input voltage TR2 positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Notes 1. Refer to SC-88 standard mounting conditions. total power dissipation 300 mW output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature +5 −12 100 100 200 +150 150 +150 V V mA mA mW °C °C °C +40 −10 V V open emitter open base open collector 50 50 10 V V V 1999 Apr 22 3 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-88 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − − − − 80 − − 3 33 0.8 IE = ie = 0; VCB = 10 V; f = 1 MHz − IC = 0; VEB = −5 V IC = −10 mA; VCE = −5 V IC = −100 µA; VCE = −5 V IC = −5 mA; VCE = −0.3 V − 100 − − −1.1 1.54 17 IE = ie = 0; VCB = −10 V; f = 1 MHz − TYP. − − − − − − 1.2 1.6 47 1 − − − − −0.6 −0.75 2.2 21 − PARAMETER CONDITIONS VALUE 416 PUMD48 UNIT K/W thermal resistance from junction to ambient note 1 MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO ICEO collector cut-off current collector cut-off current IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C Transistor TR1 (NPN) IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 100 µA; VCE = 5 V IC = 2 mA; VCE = 0.3 V 90 − 150 0.8 − 61 1.2 2.5 pF µA mV V V kΩ mV V V kΩ µA 100 1 50 nA µA µA collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA Transistor TR2 (PNP) emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance 180 − −100 −0.5 − 2.86 26 3 pF collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA 1999 Apr 22 4 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors PUMD48 103 handbook, halfpage (2) MDA973 10−1 handbook, halfpage VCEsat (V) (1) (2) (3) MDA972 hFE (1) 102 (3) 10 1 10−1 1 10 IC (mA) 102 10−2 −1 10 1 10 IC (mA) 102 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage 10 MDA975 102 handbook, halfpage Vi(on) MDA974 Vi(off) (V) (V) 10 (1) 1 (2) (3) (1) 1 (3) (2) 10−1 10−2 10−1 1 IC (mA) 10 10−1 10−1 1 10 IC (mA) 102 TR1 (NPN); VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. TR1 (NPN); VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Input-off voltage as a function of collector current; typical values. Fig.6 Input-on voltage as a function of collector current; typical values. 1999 Apr 22 5 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors PUMD48 103 handbook, halfpage hFE (1) (2) MDA977 −103 handbook, halfpage MDA976 VCEsat (mV) (3) 102 −102 10 (1) (3) (2) 1 −10−1 −1 −10 IC (mA) −102 −10 −10−1 −1 −10 IC (mA) −102 TR2 (PNP); VCE = −5 V. (1) Tamb = 100 °C. (.


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