PUMD9

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD9 NPN/PNP resistor-equipped transistors Product specification Supersedes data of 1999 Jan 07 1999 May 20 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors FEATURES Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 10 kΩ and 47 kΩ respectively) No mutual interference between the transistors Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in portable equipment Inverter circuit configurations without use of external resistors. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package. PINNING PIN 1, 4 2, 5 6, 3 MARKING TYPE NUMBER PUMD9 MARKING CODE Dt9 emitter base DESCRIPTION TR1; TR2 TR1; TR2 1, 4 MBK120 PUMD9 handbook, halfpage 6 5 4 R1 TR1 R2 5 4 6 R2 TR2 R1 1 Top view 2 3 MAM343 1 2 3 Fig.1 Simplified outline (SC-88) and symbol. 2, 5 6, 3 collector TR1; TR2 Fig.2 Equivalent inverter symbol. 1999 May 20 2 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS − − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C; note 1 − MIN. PUMD9 MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO VI collector-base voltage collector-emitte...