DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
PUMX1 NPN general purpose double transistor
Preliminary ...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
PUMX1
NPN general purpose double
transistor
Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14
Philips Semiconductors
Preliminary specification
NPN general purpose double
transistor
FEATURES Low current (max. 100 mA) Low voltage (max. 40 V) Reduces number of components and boardspace. APPLICATIONS General purpose switching and amplification.
handbook, halfpage
PUMX1
PINNING PIN 1, 4 2, 5 3, 6 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR2; TR1
6 5 4
5
4
6
DESCRIPTION Two independently operating
NPN transistors in an SC-88 plastic package.
PNP complement: PUMT1.
1 2 3 1
MAM340
TR2 TR1
MARKING TYPE NUMBER PUMX1 MARKING CODE ZtZ
Top view
2
3
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per
transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open emitter open base open collector − − − − − − − −65 − −65 50 40 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Apr 14
2...