PUMZ1

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMZ1 NPN/PNP general purpose transistors Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 40 V) Reduces number of components and boardspace. APPLICATIONS General purpose switching and amplification. handbook, halfpage PUMZ1 PINNING PIN 1, 4 2, 5 3, 6 emitter base collector DESCRIPTION TR2; TR1 TR2; TR1 TR2; TR1 6 5 4 5 4 DESCRIPTION Two independently operating NPN/PNP transistors in an SC-88 plastic package. 6 TR2 TR1 1 2 3 1 Top view MAM341 MARKING TYPE NUMBER PUMZ1 MARKING CODE FtZ 2 3 Fig.1 Simplified outline (SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS − − − − − − Tamb ≤ 25 °C − −65 − −65 Tamb ≤ 25 °C; note 1 − MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 40 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW ...