Document
DISCRETE SEMICONDUCTORS
DATA SHEET
PVB42004X NPN microwave power transistor
Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance.
handbook, halfpage
PVB42004X
PINNING - SOT445A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1
APPLICATIONS • Intended for use in common base class-B power amplifiers up to 4.2 GHz.
3 2 3
c b e
MAM251
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange.
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-B test circuit. MODE OF OPERATION f (GHz) 1 Class-B (CW) 2 3 4 VCC (V) 24 24 24 24 PL (W) typ. 13 typ. 10 typ. 7.5 typ. 4 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Gp (dB) typ. 11 typ. 10 typ. 8.8 typ. 6 ηC (%) typ. 60 typ. 48 typ. 30 typ. 25 Zi (Ω) 2.3 + j2.8 1.4 + j9.5 4.2 + j21 38 − j32 ZL (Ω) 7.8 + j11.6 3.9 + j2.6 2.3 − j2.5 1.9 − j8.5
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature operating junction temperature soldering temperature at 0.1 mm from the case; t ≤ 10 s Tmb = 75 °C CONDITIONS open emitter open base RBE = 0 Ω open collector − − − − − − −65 − − MIN.
PVB42004X
MAX. 40 15 40 3 1 18 +200 200 235 V V V V A W
UNIT
°C °C °C
handbook, halfpage
25
MGD967
Ptot (W)
20
15
(1) (2)
10
5
0 −50
0
50
100
150 200 Tmb (°C)
VCE = 24 V; f > 1 MHz. (1) VSWR ≥ 5. (2) VSWR < 3.
Fig.2
Power derating curves as functions of mounting base temperature.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL V(BR)CES ICBO IEBO Ccb Cce Ceb PARAMETER collector-emitter breakdown voltage collector cut-off current emitter cut-off current collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS IC = 30 mA; RBE = 0 VCB = 24 V; IE = 0 VEB = 1.5 V; IC = 0 VCB = 24 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 24 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 24 V; VEB = 1 V; IE = IC = 0; f = 1 MHz MIN. 40 − − − − − − − − 50 1.2 30 TYP. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting-base to heatsink CONDITIONS Tj = 75 °C Tj = 75 °C; note 1
PVB42004X
MAX. 6.5 0.7
UNIT K/W K/W
MAX. − 50 1.5 − − − V
UNIT
mA mA pF pF pF
handbook, halfpage
16
MGD978
handbook, halfpage
16
MGD979
80 ηC (%) 60
PL (W) 12
Gp (dB) 12 Gp
8
8
ηC
40
4
4
20
0 1 2 3 4 f (GHz) 5
0 1 2 3 4 f (GHz) 5
0
VCC = 24 V; PS = 1 W. VCC = 24 V; PS = 1 W.
Fig.4 Fig.3 Load power as a function of frequency.
Power gain and efficiency as functions of frequency.
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PVB42004X
handbook, full pagewidth
1 0.5 Zi 3 0.2 2 1.5 +j 0 −j 10 4 0.2 4.2 5 1 GHz 0.2 0.5 1 2 5 10 10 2.5 3.5 5 2
∞
0.5 1 VCC = 24 V; PS = 1 W; Zo = 50 Ω.
2
MGL019
Fig.5 Input impedance as a function of frequency; typical values.
handbook, full pagewidth
1 0.5 2
0.2
ZL 1 GHz 1.5 5 10 0.5 1 2 5 10
+j 0 −j 2.5 3
2
0.2
∞
10
3.5 4 0.2 4.2
5
0.5 1 VCC = 24 V; PS = 1 W; Zo = 50 Ω.
2
MGL018
Fig.6 Output impedance as a function of frequency; typical values.
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PACKAGE OUTLINE
PVB42004X
handbook, full pagewidth
8.0 0.1 3.4 3.0 3 20.6 max seating plane 3.2 2.9 0.4 M 1.8 max 4.0 max
1
4.0 min
3.2 2.9
5.2 max
5.35 max
O 0.3 M
2
4.0 min
7.1 3.2 2.9 14.2 0.4 M.