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PVB42004X Dataheets PDF



Part Number PVB42004X
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet PVB42004X DatasheetPVB42004X Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Local thick oxide and gold sandwich metallization realizes very s.

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DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage PVB42004X PINNING - SOT445A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 APPLICATIONS • Intended for use in common base class-B power amplifiers up to 4.2 GHz. 3 2 3 c b e MAM251 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange. Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-B test circuit. MODE OF OPERATION f (GHz) 1 Class-B (CW) 2 3 4 VCC (V) 24 24 24 24 PL (W) typ. 13 typ. 10 typ. 7.5 typ. 4 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Gp (dB) typ. 11 typ. 10 typ. 8.8 typ. 6 ηC (%) typ. 60 typ. 48 typ. 30 typ. 25 Zi (Ω) 2.3 + j2.8 1.4 + j9.5 4.2 + j21 38 − j32 ZL (Ω) 7.8 + j11.6 3.9 + j2.6 2.3 − j2.5 1.9 − j8.5 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature operating junction temperature soldering temperature at 0.1 mm from the case; t ≤ 10 s Tmb = 75 °C CONDITIONS open emitter open base RBE = 0 Ω open collector − − − − − − −65 − − MIN. PVB42004X MAX. 40 15 40 3 1 18 +200 200 235 V V V V A W UNIT °C °C °C handbook, halfpage 25 MGD967 Ptot (W) 20 15 (1) (2) 10 5 0 −50 0 50 100 150 200 Tmb (°C) VCE = 24 V; f > 1 MHz. (1) VSWR ≥ 5. (2) VSWR < 3. Fig.2 Power derating curves as functions of mounting base temperature. 1997 Feb 19 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL V(BR)CES ICBO IEBO Ccb Cce Ceb PARAMETER collector-emitter breakdown voltage collector cut-off current emitter cut-off current collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS IC = 30 mA; RBE = 0 VCB = 24 V; IE = 0 VEB = 1.5 V; IC = 0 VCB = 24 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 24 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 24 V; VEB = 1 V; IE = IC = 0; f = 1 MHz MIN. 40 − − − − − − − − 50 1.2 30 TYP. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting-base to heatsink CONDITIONS Tj = 75 °C Tj = 75 °C; note 1 PVB42004X MAX. 6.5 0.7 UNIT K/W K/W MAX. − 50 1.5 − − − V UNIT mA mA pF pF pF handbook, halfpage 16 MGD978 handbook, halfpage 16 MGD979 80 ηC (%) 60 PL (W) 12 Gp (dB) 12 Gp 8 8 ηC 40 4 4 20 0 1 2 3 4 f (GHz) 5 0 1 2 3 4 f (GHz) 5 0 VCC = 24 V; PS = 1 W. VCC = 24 V; PS = 1 W. Fig.4 Fig.3 Load power as a function of frequency. Power gain and efficiency as functions of frequency. 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor PVB42004X handbook, full pagewidth 1 0.5 Zi 3 0.2 2 1.5 +j 0 −j 10 4 0.2 4.2 5 1 GHz 0.2 0.5 1 2 5 10 10 2.5 3.5 5 2 ∞ 0.5 1 VCC = 24 V; PS = 1 W; Zo = 50 Ω. 2 MGL019 Fig.5 Input impedance as a function of frequency; typical values. handbook, full pagewidth 1 0.5 2 0.2 ZL 1 GHz 1.5 5 10 0.5 1 2 5 10 +j 0 −j 2.5 3 2 0.2 ∞ 10 3.5 4 0.2 4.2 5 0.5 1 VCC = 24 V; PS = 1 W; Zo = 50 Ω. 2 MGL018 Fig.6 Output impedance as a function of frequency; typical values. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE PVB42004X handbook, full pagewidth 8.0 0.1 3.4 3.0 3 20.6 max seating plane 3.2 2.9 0.4 M 1.8 max 4.0 max 1 4.0 min 3.2 2.9 5.2 max 5.35 max O 0.3 M 2 4.0 min 7.1 3.2 2.9 14.2 0.4 M.


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