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PXT3906 Dataheets PDF



Part Number PXT3906
Manufacturers NXP
Logo NXP
Description PNP switching transistor
Datasheet PXT3906 DatasheetPXT3906 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching applications. DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN complement: PXT3904. MARKING TYPE NUMBER PXT3906 MARKING CODE p2A 1 Bottom vie.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching applications. DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN complement: PXT3904. MARKING TYPE NUMBER PXT3906 MARKING CODE p2A 1 Bottom view 2 3 MAM297 PXT3906 PINNING PIN 1 2 3 emitter collector base DESCRIPTION handbook, halfpage 2 3 1 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −55 − −55 MIN. MAX. −40 −40 −6 −100 −200 −100 1.2 +150 150 +150 V V V mA mA mA W °C °C °C UNIT 1999 Apr 14 2 Philips Semiconductors Product specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 104 24 PXT3906 UNIT K/W K/W 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −30 V IC = 0; VEB = −6 V VCE = −1 V; (see Fig.2) IC = −0.1 mA IC = −1 mA IC = −10 mA IC = −50 mA IC = −100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA IE = ie = 0; VCB = −5 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −10 mA; VCE = −20 V; f = 100 MHz IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz 60 80 100 60 30 − − −650 − − − 250 − − − 300 − − −250 −400 −850 −950 4.5 10 − 4 mV mV mV mV pF pF MHz dB − − MIN. MAX. −50 −50 UNIT nA nA Switching times (between 10% and 90% levels); (see Fig.3) ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA − − − − − − 65 35 35 300 225 75 ns ns ns ns ns ns 1999 Apr 14 3 Philips Semiconductors Product specification PNP switching transistor PXT3906 MGD835 handbook, full pagewidth 160 hFE 120 80 40 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 VCE = −1 V. Fig.2 DC current gain; typical values. handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MGD624 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 14 4 Philips Semiconductors Product specification PNP switching transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads PXT3906 SOT89 D B A b3 E HE L 1 2 b2 3 c w M b1 e1 e 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 14 5 Philips Semiconductors Product specification PNP switching transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PXT3906 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for.


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