PXTA64

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA64 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 24 Philips Semiconductors Product specification PNP Darlington transistor FEATURES High current (max. 500 mA) Low voltage (max. 30 V). APPLICATIONS High input impedance preamplifiers. DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complement: PXTA14. MARKING 1 2 3 handbook, halfpage PXTA64 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 3 2 TR1 TR2 1 MAM301 TYPE NUMBER PXTA64 MARKING CODE p2V Bottom view Fig.1 Simplified outline (SOT89) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −10 mA; VCE = −5 V IC = −100 mA; VCE = −5 V; f = 100 MHz open emitter VBE = 0 CONDITIONS − − − − 10000 125 MIN. MAX. −30 −30 −500 1.3 − − MHz V V mA W UNIT 1997 Apr 24 2 Philips Semiconductors Product specification PNP Darlington transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature ...