PZB16035U

DISCRETE SEMICONDUCTORS DATA SHEET PZB16035U NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. Input matching cell improves input impedance and allows an easier design of wideband circuits. APPLICATIONS Common base class-B power amplifiers under CW conditions in military and professional applications up to 1.6 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Top view 3 handbook, halfpage PZB16035U PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b e 2 MAM314 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common base class-B selective amplifier. MODE OF OPERATION Class-B (CW) f (GHz) 1.55 VCC (V) 28 PL (W) ≥35 Gp (dB) ≥8 ηC (%) ≥45 Zi; ZL (Ω) see Figs 5 and 6 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe...