PZT3904

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 04 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistor FEATURES Low current (max. 200 mA) Low voltage (max. 40 V). APPLICATIONS High-speed saturated switching. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. handbook, halfpage PZT3904 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 200 300 100 1.05 +150 150 +150 V V V mA mA mA W °C °C °C UNIT 1999 Apr 14 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rt...