PZT3904
NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 100mA Low collector-emitter saturation volta...
PZT3904
NPN Silicon Switching
Transistor
High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: PZT3906 (
PNP)
4
3 2 1
VPS05163
Type PZT3904
Maximum Ratings Parameter
Marking ZT 3904 1=B
Pin Configuration 2=C 3=E 4=C
Package SOT223
Symbol VCEO VCBO VEBO IC Ptot Tj Tstg
Value 40 60 6 200 1.5 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 72 °C Junction temperature Storage temperature
mA W °C
Thermal Resistance Junction - soldering point 1) RthJS
52
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
PZT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 ICBO ICEV IBEV hFE V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
40 60 6 -
-
50 50 50
V
nA
Collector-emitter cutoff current
VCE = 30 V, -VBE = 0.5 V
Base-emitter cutoff current
VCE = 30 V, -VBE = 0.5 DC current gain 1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 100 ...
