PZT65

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZT651T1/D NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. High Current: 2.0 Amp The SOT–223 package can be soldered using wave or reflow. SOT–223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use PZT651T1 to order the 7 inch/1000 unit reel Use PZT651T3 to order the 13 inch/4000 unit reel PNP Complement is PZT751T1 COLLECTOR 2,4 PZT651T1 Motorola Preferred Device SOT–223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT 4 1 2 3 BASE 1 EMITTER 3 CASE 318E–04, STYLE 1 TO–261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 60 80 5.0 2.0 0.8 6.4 – 65 to 150 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C °C DEVICE MARKING 651 THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction–to–Ambient in Free Air Maximum Temperature for Solder...