PZT751T1

PZT751T1 Preferred Device PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features http://onsemi.com thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die www.DataSheet4U.com NPN Complement is PZT651T1 Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 60 80 5.0 2.0 0.8 6.4 − 65 to 150 150 Unit Vdc Vdc Vdc Adc W mW/°C °C °C High Current: 2.0 A The SOT−223 Package can be soldered using wave or reflow. SOT−223 package ensures level mounting, resulting in improved SOT−223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 BASE 1 EMITTER 3 MARKING DIAGRAM TO−261AA CASE 318E STYLE 1 D ZT 751 THERMAL CHARACTERISTICS Rating Thermal Resistance from Junction−to− Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RqJA TL Value 156 260 10 Unit °C/W °C Sec ZT 751 = Specific Device Code D = Date Code ORDERING INFORMATION Device PZT...