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PZTA06 Dataheets PDF



Part Number PZTA06
Manufacturers NXP
Logo NXP
Description NPN transistor
Datasheet PZTA06 DatasheetPZTA06 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA06 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • Medium power switching in e.g. telephony and professional communication. handbook, halfpage PZTA06 PINNING PIN 1 2, 4 3 base collector .

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA06 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • Medium power switching in e.g. telephony and professional communication. handbook, halfpage PZTA06 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. 1 2, 4 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 100 mA; VCE = 1 V IC = 10 mA; VCE = 2 V; f = 100 MHz open emitter open base CONDITIONS − − − − 100 100 MIN. MAX. 80 80 500 1.2 − − MHz V V mA W UNIT 1997 Jul 14 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. PZTA06 MAX. 80 80 4 500 800 200 1.2 +150 150 +150 V V V UNIT mA mA mA W °C °C °C 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBE fT PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 80 V IC = 0; VEB = 5 V IC = 10 mA; VCE = 1 V IC = 100 mA; VCE = 1 V collector-emitter saturation voltage IC = 100 mA; IB = 10 mA base-emitter voltage transition frequency IC = 100 mA; VCE = 1 V IC = 10 mA; VCE = 2 V; f = 100 MHz − − 100 100 − − 100 MIN. MAX. 50 50 − − 250 1.2 − mV V MHz UNIT nA nA PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 103 22 UNIT K/W K/W 1997 Jul 14 3 Philips Semiconductors Product specification NPN general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for g.


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