MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal Technologies
MPSA65
MMBTA65
PZTA65
C BE
TO-92
C
SOT-23
Mark: 2...
MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal Technologies
MPSA65
MMBTA65
PZTA65
C BE
TO-92
C
SOT-23
Mark: 2W
E B
C
SOT-223
C B
E
PNP Darlington
Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
30
VCBO VEBO IC
Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
30 10 1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V V V A °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
MPSA65 625 5.0 83.3
200
Max
*MMBTA65 350 2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA65 1,000 8.0
125
Units
mW mW/°C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
A65, Rev...