PZTA65

MPSA65 / MMBTA65 / PZTA65 Discrete POWER & Signal Technologies MPSA65 MMBTA65 PZTA65 C BE TO-92 C SOT-23 Mark: 2W E B C SOT-223 C B E PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCES Collector-Emitter Voltage 30 VCBO VEBO IC Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous 30 10 1.2 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V V V A °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient MPSA65 625 5.0 83.3 200 Max *MMBTA65 350 2.8 357 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **PZTA65 1,000 8.0 125 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation A65, Rev...