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8090 Datasheet, Equivalent, Effect Transistor.LDMOS RF Power Field Effect Transistor LDMOS RF Power Field Effect Transistor |
| Part | 8090 |
|---|---|
| Description | LDMOS RF Power Field Effect Transistor |
| Feature | PTF080901
LDMOS RF Power Field Effect T ransistor 90 W, 869–960 MHz
Descript ion
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intende d for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metalli zation ensures excellent device lifetim e and reliability. EDGE Modulation Spe ctrum Performance VDD = 28 V, IDQ = 700 mA, f = 959. 8 MHz 0 55 -10 Ef f ici ency 50 -20 45 -30 40 -40 35 -50 4 00 kHz -60 30 25 • Broadband intern al matching • Typical EDGE performanc e - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% • Typical CW performance - Outpu . |
| Manufacture | Infineon Technologies AG |
| Datasheet |
| Part | 8090 |
|---|---|
| Description | LDMOS RF Power Field Effect Transistor |
| Feature | PTF080901
LDMOS RF Power Field Effect T ransistor 90 W, 869–960 MHz
Descript ion
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intende d for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metalli zation ensures excellent device lifetim e and reliability. EDGE Modulation Spe ctrum Performance VDD = 28 V, IDQ = 700 mA, f = 959. 8 MHz 0 55 -10 Ef f ici ency 50 -20 45 -30 40 -40 35 -50 4 00 kHz -60 30 25 • Broadband intern al matching • Typical EDGE performanc e - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% • Typical CW performance - Outpu . |
| Manufacture | Infineon Technologies AG |
| Datasheet |
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