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8090 Datasheet, Equivalent, Effect Transistor.

LDMOS RF Power Field Effect Transistor

LDMOS RF Power Field Effect Transistor

 

 

 

Part 8090
Description LDMOS RF Power Field Effect Transistor
Feature PTF080901 LDMOS RF Power Field Effect T ransistor 90 W, 869–960 MHz Descript ion Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intende d for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metalli zation ensures excellent device lifetim e and reliability.
EDGE Modulation Spe ctrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.
8 MHz 0 55 -10 Ef f ici ency 50 -20 45 -30 40 -40 35 -50 4 00 kHz -60 30 25
• Broadband intern al matching
• Typical EDGE performanc e - Average output power = 45 W - Gain = 18 dB - Efficiency = 40%
• Typical CW performance - Outpu .
Manufacture Infineon Technologies AG
Datasheet
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Part 8090
Description LDMOS RF Power Field Effect Transistor
Feature PTF080901 LDMOS RF Power Field Effect T ransistor 90 W, 869–960 MHz Descript ion Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intende d for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metalli zation ensures excellent device lifetim e and reliability.
EDGE Modulation Spe ctrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.
8 MHz 0 55 -10 Ef f ici ency 50 -20 45 -30 40 -40 35 -50 4 00 kHz -60 30 25
• Broadband intern al matching
• Typical EDGE performanc e - Average output power = 45 W - Gain = 18 dB - Efficiency = 40%
• Typical CW performance - Outpu .
Manufacture Infineon Technologies AG
Datasheet
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