Q627002G0078

CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 81 CGY 81 Q627002G0078 MW 16 Maximum Ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation Total power dissipation (Ts ≤ 80 °C) Ts: Temperature at soldering point Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 11 Unit K/W Symbol VD max. Value 9 4 150 -55...+150 tbd Tbd Unit V A °C °C W W ID TCh Tstg PPulse Ptot RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Functional Block Diagram: Vneg Vcon VD1 Control Circuit RF OUT RF IN Pin Configuration: Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name VD Cell n. c. RF IN Cell RF IN n. c. Vneg Vcon n. c. n. c. n. c. n. c. RF out RF out RF out RF out n. c. n. c. RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage Negative voltage Control voltage Configuration Drain voltage preamplifier stage Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07.98 HL HF PE 19...