Silicon Crossover Ring Quad Schottky Diode
q
BAT 14-099R
Medium barrier diode for double balanced mixers, phase detect...
Silicon Crossover Ring Quad
Schottky Diode
q
BAT 14-099R
Medium barrier diode for double balanced mixers, phase detectors and modulators
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Q62702-A0042 Pin Configuration Package1) SOT-143
BAT 14-099R S8
Maximum Ratings per Diode Parameter Forward current Power dissipation, TS ≤ 70 ˚C Storage temperature range Operating temperature range Thermal Resistance per Diode Junction – ambient2) Junction – soldering point Rth JA Rth JS
≤ ≤
Symbol IF Ptot Tstg Top
Values 90 100 – 55 … + 150
Unit mA mW
– 55 … + 150 ˚C
1020 780
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96
BAT 14-099R
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching1) IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VF – –
∆VF
Values typ. 0.4 0.48 – 0.38 5.5 max.
Unit V – – 20 – – mV pF Ω
– – –
CT RF
Forward current IF = f (VF)
Forward current IF = f (TS; TA*) *Package mounted on alumina
1) ∆VF
is the difference between the lowest and the highest VF in the component.
Semiconductor Group
2
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