Q62702-A0960 Datasheet: Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)





Q62702-A0960 Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) Datasheet

Part Number Q62702-A0960
Description Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
Manufacture Siemens Semiconductor Group
Total Page 4 Pages
PDF Download Download Q62702-A0960 Datasheet PDF

Features: Silicon Schottky Diode Preliminary Data DBS mixer application to 12 GHz q Low n oise figure q Medium barrier type q BA T 14-098 ESD: Electrostatic discharge sensitive device, observe handling prec autions! Type BAT 14-098 Marking Orderi ng Code (tape and reel) white A Q62702- A0960 Pin Configuration Package1) SOD-1 23 Maximum Ratings Parameter Reverse v oltage Forward current Power dissipatio n, TS ≤ 80 ˚C Storage temperature ra nge Operating temperature range Thermal Resistance Junction – ambient2) Junc tion – soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tstg Top Va lues 4 90 100 – 55 … + 150 Unit V mA mW – 55 … + 150 ˚C 770 690 K /W 1) 2) For detailed information see chapter Package Outlines. Package moun ted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAT 14-098 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Di.

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Silicon Schottky Diode
Preliminary Data
q DBS mixer application to 12 GHz
q Low noise figure
q Medium barrier type
BAT 14-098
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 14-098
Marking Ordering Code
(tape and reel)
white A Q62702-A0960
Pin Configuration
Package1)
SOD-123
Maximum Ratings
Parameter
Reverse voltage
Forward current
Power dissipation, TS 80 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance
Junction – ambient2)
Junction – soldering point
Symbol
VR
IF
Ptot
Tstg
Top
Values
Unit
4V
90 mA
100 mW
– 55 … + 150 ˚C
– 55 … + 150
Rth JA
Rth JS
770
690
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94

           






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