Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Silicon Crossover Ring Quad Schottky Diode
BAT 114-099R
Features • High barrier diode for double balanced mixers, phas...
Silicon Crossover Ring Quad
Schottky Diode
BAT 114-099R
Features High barrier diode for double balanced mixers, phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (taped) Q62702-A1006 Pin Configuration Package1) SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings (per diode) Parameter Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbol Limit Values 90 − 55 to + 150 − 55 to + 150 100 Unit mA °C °C mW
IF Top Tstg Ptot
Semiconductor Group
1
02.96
BAT 114-099R
Thermal Resistance (per diode) Parameter Junction to soldering point Junction to ambient1)
1)
Symbol
Limit Values ≤ 780 ≤ 1020
Unit K/W K/W
RthJS RthJA
Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
Electrical Characteristics (per diode; TA = 25 °C) Parameter Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching1) IF = 10 mA Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10 mA / 50 mA
1)
Symbol
Limit Values min. typ. max.
Unit V
VF
∆ VF
− − − − −
0.58 0.68 − 0.25 5.5
0.7 0.78 mV 20 pF − − Ω
CT RF
∆VF is difference between lowest and highest VF in component.
Semiconductor Group
2
BAT 114-099R
Forward Current IF = f(VF)
Semiconductor Group
3
...