Q62702-A1006 Data Sheet PDF | Siemens Semiconductor Group





(Datasheet) Q62702-A1006 PDF Download

Part Number Q62702-A1006
Description Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Manufacture Siemens Semiconductor Group
Total Page 3 Pages
PDF Download Download Q62702-A1006 Datasheet PDF

Features: Silicon Crossover Ring Quad Schottky Dio de BAT 114-099R Features • High bar rier diode for double balanced mixers, phase detectors and modulators ESD: El ectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (ta ped) Q62702-A1006 Pin Configuration Pac kage1) SOT-143 1) Dimensions see chap ter Package Outlines Maximum Ratings ( per diode) Parameter Forward current Op eration temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbo l Limit Values 90 − 55 to + 150 − 5 5 to + 150 100 Unit mA °C °C mW IF T op Tstg Ptot Semiconductor Group 1 0 2.96 BAT 114-099R Thermal Resistance (per diode) Parameter Junction to solde ring point Junction to ambient1) 1) Sy mbol Limit Values ≤ 780 ≤ 1020 Un it K/W K/W RthJS RthJA Mounted on alu mina 15 mm × 16.7 mm to 0.7 mm Electr ical Characteristics (per diode; TA = 2 5 °C) Parameter Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching1) IF = 10 mA Diode capacitance VR = 0 V,.

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Q62702-A1006 datasheet
Silicon Crossover Ring Quad Schottky Diode
BAT 114-099R
Features
• High barrier diode for double balanced mixers,
phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
BAT 114-099R
Marking Ordering Code
(taped)
14s Q62702-A1006
Pin Configuration
Package1)
SOT-143
1) Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter
Forward current
Operation temperature
Storage temperature
Power dissipation, TS 70 °C
Symbol
IF
Top
Tstg
Ptot
Limit Values
90
55 to + 150
55 to + 150
100
Unit
mA
°C
°C
mW
Semiconductor Group
1
02.96

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