BAS 170W
Silicon Schottky Diode
l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamp...
BAS 170W
Silicon
Schottky Diode
l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323
ESD: Electrostastic discharge sensitive device, observe handling precautions!
Type BAS 170W
Marking 7
Ordering Code (tape and reel) Q62702-A1072
Pin Configuration Package 1 2 A C SOD-323
1)
Maximum Ratings Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total Power dissipation TS ≤ 97°C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient
1)
Symbol
BAS 170W 70 70 100 250 -55 +150°C -55...+150°C
Unit V mA mA mW °C °C
VR IF IFSM Ptot Top Tstg
Junction-soldering point
Rth JA Rth JS
≤ 320 ≤ 210
K/W K/W
_________________________________
1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu
Semiconductor Group
1
Edition A01, 11.07.94
BAS 170W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol min.
Value typ. max.
Unit
DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V
V(BR)
70 375 705 880 1.5 34 2 -
V mV 300 600 750 410 750 1000 µA 0.1 10 pF 2 ps 100 Ω nH -
VF
IR
VR = 70 V
Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance
CT I RF LS
Semiconductor Group
2
Edition A01, 11.07.94
BAS 170W
Forward c...