Q62702-A1097

BAV 70S Silicon Switching Diode Array For high speed switching applications Common cathode Internal (galvanic) isolated Diodes Arrays in one package Type BAV 70S Marking Ordering Code A4s Q62702-A1097 Pin Configuration 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total Power dissipation Symbol Values 70 70 200 4.5 250 mA A mW 150 - 65 ... + 150 ≤ 530 ≤ 260 °C Unit V VR VRM IF IFS Ptot Tj Tstg RthJA RthJS TS = 85 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-28-1996 BAV 70S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit V(BR) 70 - V mV 715 855 1000 1250 µA 2.5 30 50 I(BR) = 100 µA Forward voltage VF IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current IR VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics per Diode Diode capacitance CD 1.5 pF ns 6 VR = 0 V, f = 1 MHz Reverse recovery time trr IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at 1 mA Semiconductor Group 2 Nov-28-1996 BAV 70S Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25°C 300 mA IF 200 TA 150 TS 1...