BAT 63-099R Silicon Schottky Diodes
• Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover r...
BAT 63-099R Silicon
Schottky Diodes
Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad
Type
Marking Ordering Code Q62702-A1105
Pin Configuration 1=A 2=C
Package SOT-143
BAT 63-099RSN
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, BAT17W Junction temperature Operating temperature range Storage temperature Symbol Values 40 40 Unit V mA mW 150 - 55 ... + 150 °C
VR IF TA ≤ 97°C Ptot Tj Top Tstg
Total power dissipation, BAT17-04...06W TS ≤ 92°C Ptot
Thermal Resistance Junction - ambient, BAT17W Junction - ambient, BAT17-04W...06W Junction - soldering poin, BAT17W Junction - soldering point, BAT17-04W...06W
RthJA RthJA RthJS RthJS
K/W
Semiconductor Group
1
Feb-01-1996
BAT 63-099R
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit
V(BR) IR
0.85 0.35 10
V µA V 1 pF 0.6 OHM
I(BR) = 100 µA
Reverse current
VR = 40 V, TA = 25 °C
Forward voltage
VF CT RF
IF = 2 mA
Diode capacitance
VR = 0 , f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 100 MHz
Semiconductor Group
2
Feb-01-1996
BAT 63-099R
Forward current IF = f (VF)
Diode capacitance CT = f (VR) f = 1MHz
10 2 mA
0.5
IF
10 1 TA = 25°C TA = 85°C TA = 125°C 10 0
CT
pF
0.3
0.2
10 -1 0.1
10 -2 0.0
0.0 0.2 0.4 0.6 V 1.0 0 5 10 15 20 V 30
VF
VR
Leakage current IR = f (VR) TA = Parameter
10 3
uA
IR
10 2
TA = 12...