BAT 64...W
Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applicat...
BAT 64...W
Silicon
Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
3
2 1
VSO05561
BAT 64W
BAT 64-04W
BAT 64-05W
BAT 64-06W
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 64W BAT 64-04W BAT 64-05W BAT 64-06W Marking Ordering Code 63s 64s 65s 66s Q62702-A1159 Q62702-A1160 Q62702-A1161 Q62702-A1162 Pin Configuration 1=A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2 Package SOT-323
Maximum Ratings Parameter Diode reverse voltage Forward current Average forward current (50/60Hz, sinus) Surge forward current (t < 100µs) Total power dissipation Symbol Value 40 250 120 800 250 250 250 150 -55...+150 °C mW Unit V mA
VR IF IFAV IFSM
BAT 64W , TS≤120°C Ptot
Total power dissipat. BAT64-04/06W , TS≤111°C Ptot Total power dissipation BAR 64-05W , T S≤104°C Ptot Junction temperature Storage temperature
Tj Tstg
Semiconductor Group Semiconductor Group
11
Sep-07-1998 1998-11-01
BAT 64...W
Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - soldering point BAT 64-04/06W Junction - soldering point BAT 64-05W
RthJA RthJA RthJA RthJS RthJS RthJS
≤255 ≤290 ≤455 ≤120 ≤155 ≤185
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Electrical Characteristics at TA = 25 °C, u...
