Q62702-A1186

BAS70-07W Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS70-07W Marking Ordering Code 77s Q62702-A1186 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100µs) Total power dissipation, T S ≤ 91 °C Junction temperature Operating temperature range Storage temperature Symbol Value 70 70 100 250 150 - 55 ...+150 - 55 ...+150 mW °C Unit V mA VR IF I FSM Ptot Tj T op T stg Maximum Ratings Junction - ambient 1) RthJA RthJS ≤ 285 ≤ 145 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Ma 1998-11-01 -26-1998 BAS70-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. 0.1 10 max. V µA Unit V(BR) IR 70 - I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage VF 300 600 750 375 705 880 410 750 1000 V I F = 1 mA I F = 10 mA I F = 15 mA AC characteristics Diode capacitance CT τ - 1.5 34 2 2 100 - pF ps Ω nH VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance rf Ls I F = 10 mA, f = 10 kHz Series inductance Semiconductor Group Semicondu...