SMBT 3904S
NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturat...
SMBT 3904S
NPN Silicon Switching
Transistor Array High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated
Transistors with high matching in one package Complementary type: SMBT 3906S (
PNP)
4 5 6
2 1
3
VPS05604
Type SMBT 3904S
Marking Ordering Code s1A Q62702-A1201
Pin Configuration
Package
1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 40 60 6 200 250 150 - 65...+150 mA mW °C Unit V
VCEO VCBO VEBO IC Ptot Tj Tstg
RthJA RthJS
≤275 ≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
SMBT 3904S
Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 50
Unit
V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE
40 60 6 -
V
I C = 1 mA, I B = 0
Collector-base breakdown voltage
I C = 10 µA, IB = 0
Emitter-base breakdown voltage
I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0
DC current gain 1)
nA -
I C = 100 µA, V CE = 1 V I C = 1 mA, V CE = 1 V I C = 10 mA, VCE = 1 V I C = 50 mA, VCE = 1 V I C = 100 mA, V CE = 1 V
Collector-emitter saturation volta...