SMBTA 42M
NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Comp...
SMBTA 42M
NPN Silicon High-Voltage
Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA 92M (
PNP)
4 5 3 2 1
VPW05980
Type SMBTA 42M
Marking Ordering Code Pin Configuration s1D Q62702-A1243
Package
1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, T S ≤ 83 °C Junction temperature Storage temperature Symbol Value 300 300 6 500 100 1.5 150 - 65...+150 W °C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤100 ≤45
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group Semiconductor Group
11
Jun-18-1997 1998-11-01
SMBTA 42M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter
Unit max. 100 20 100 nA µA nA V
min. DC characteristics Collector-emitter breakdown voltage
typ. -
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE
300 300 6 -
I C = 100 µA, IB = 0
Collector-base breakdown voltage
I C = 10 µA, IB = 0
Emitter-base breakdown voltage
I E = 10 µA, I C = 0 Collector cutoff current VCB = 200 V, I E = 0
Collector-base cutoff current
VCB = 200 V, T A = 150 °C
Emitter cutoff current
VEB = 3 V, I C = 0
DC current gain 1)
I C = 1 mA, V CE = 10 V I C = 10 mA, VCE = 10 V I C = 30 mA, VCE = 10 V
Collector-emitter saturation voltag...