Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR 64 ... W
Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency ...
Description
BAR 64 ... W
Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz
3
2 1
VSO05561
BAR 64-04W
BAR 64-05W
BAR 64-06W
Type BAR 64-04W BAR 64-05W BAR 64-06W
Marking Ordering Code PPs PRs PSs Q62702-A1264 Q62702-A1265 Q62702-A1266
Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = C2 2 = C2 3 = C1/2 3 = A1/2
Package 3=C1/A2 SOT-323
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 115 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 200 100 250 150 - 55 ...+150 - 55 ...+150
Unit V mA mW °C
VR IF Ptot Tj Top Tstg
RthJA RthJS
≤ 300 ≤ 140
K/W
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAR 64 ... W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. 50 1.1
Unit
V(BR) IR VF
200 -
V µA mV
I (BR) = 5 µA
Reverse current
VR = 20 V
Forward voltage
I F = 50 mA
AC characteristics Diode capacitance
CT rf
-
0.23
0.35
pF Ω
VR = 20 V, f = 1 MHz
Forward resistance
IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz
Charge carrier life time τrr
-
12.5 2.1 0.85 1.55 1.2
20 2.8 1.35 µs nH
...
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