Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
BAR 81W
Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolatio...
Description
BAR 81W
Silicon RF Switching Diode Preliminary data Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4
2 1
VPS05605
Type BAR 81W
Marking Ordering Code BBs Q62702-A1270
Pin Configuration
Package
1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 30 100 100 150 -55 ...+125 -55 ...+150
Unit V mA mW °C °C
VR IF Ptot Tj Top Tstg
RthJA RthJS
≤ 200 ≤ 120
K/W
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAR 81W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Characteristics Reverse current Symbol min. Values typ. 0.93 max. 20 1 nA V Unit
IR VF
-
VR = 20 V
Forward voltage
I F = 100 mA
AC characteristics Diode capacitance
CT
0.6 0.57 0.7 0.15 -
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Forward resistance
rf Ls
Ω nH
IF = 5 mA, f = 100 MHz
Series inductance
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF
Semiconductor Group Semiconductor Group
22
Sep-04-1998 1998-11-01
BAR 81W
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
120
mA
100 90 80
TS
IF
...
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