Q62702-A3461 Datasheet: Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)





Q62702-A3461 Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) Datasheet

Part Number Q62702-A3461
Description Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
Manufacture Siemens Semiconductor Group
Total Page 4 Pages
PDF Download Download Q62702-A3461 Datasheet PDF

Features: Silicon Dual Schottky Diode DBS mixer ap plication to 12 GHz q Low noise figure q Medium barrier type q BAT 14-099 ES D: Electrostatic discharge sensitive de vice, observe handling precautions! Typ e BAT 14-099 Marking Ordering Code (tap e and reel) S9 Q62702-A3461 Pin Configu ration Package1) SOT-143 Maximum Ratin gs per Diode Parameter Reverse voltage Forward current Power dissipation, TS 55 ˚C Storage temperature range Ope rating temperature range Thermal Resist ance Junction – ambient2) Junction soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tstg Top Values 4 90 100 – 55 … + 150 Unit V mA mW – 55 … + 150 ˚C 1090 930 K/W 1) 2) For detailed information see chapt er Package Outlines. Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm. S emiconductor Group 1 02.96 BAT 14-09 9 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise speci fied. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode c.

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Silicon Dual Schottky Diode
q DBS mixer application to 12 GHz
q Low noise figure
q Medium barrier type
BAT 14-099
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 14-099
Marking Ordering Code
(tape and reel)
S9 Q62702-A3461
Pin Configuration
Package1)
SOT-143
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Power dissipation, TS 55 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance
Junction – ambient2)
Junction – soldering point
Symbol
VR
IF
Ptot
Tstg
Top
Values
Unit
4V
90 mA
100 mW
– 55 … + 150 ˚C
– 55 … + 150
Rth JA
Rth JS
1090
930
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96

           






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