Q62702-A3468

BAS 70-04S Silicon Schottky Diode Array General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing 4 5 6 2 1 3 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70-04S Marking Ordering Code 74s Q62702-A3468 Pin Configuration 1/4=A1 2/5=C2 Package 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S ≤ 97°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 70 70 100 250 150 -55...+150 -55...+150 Unit V mA mW °C VR IF IFSM Ptot Tj Top Tstg RthJA RthJS ≤ 445 ≤ 210 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAS 70-04S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I F = 15 mA AC characteristics Diode capacitance CT τ - 1.6 30 2 100 - pF ps Ω VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Forward resistance rf I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 19...