Q62702-A826 Datasheet: Silicon Schottky Diode





Q62702-A826 Silicon Schottky Diode Datasheet

Part Number Q62702-A826
Description Silicon Schottky Diode
Manufacture Siemens Semiconductor Group
Total Page 2 Pages
PDF Download Download Q62702-A826 Datasheet PDF

Features: Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bi as Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested diodes a vailable ESD: Electrostatic discharge sensitive device, observe handling prec autions! Type Frequency band (GHz) Mark ing Ordering Code (tape and reel) 32 Q6 2702-A826 Pin Configuration Package1) C erec-X BAT 32 … 18 (X, Ku) Maximum Ratings Parameter Reverse voltage Forwa rd current Junction temperature Storage temperature range Operating temperatur e range Symbol VR IF Tj Tstg Top Values 6.5 50 150 – 55 … + 150 – 55 … + 150 Unit V mA ˚C 1) For detailed information see chapter Package Outline s. BAT 32 Electrical Characteristics at TA = 25 ˚C, unless otherwise specif ied. Parameter Breakdown voltage IR = 1 mA Forward voltage IF = 1 mA IF = 10 m A Diode capacitance VR = 0.15 V, f = 1 MHz Differential resistance VF = 0, f = 10 kHz Symbol min. V(BR) VF – – CT Ro – – 0.2 0.6 0.20 15 – – 0.24 – pF kΩ 6.5 Values typ. – max. – V Unit Forwa.

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Silicon Schottky Diode
q RF detector
q Low-power mixer
q Zero bias
q Very low capacitance
q For frequencies up to 18 GHz
q HiRel/Mil-tested diodes available
BAT 32
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Frequency
band (GHz)
BAT 32 … 18 (X, Ku)
Marking Ordering Code
(tape and reel)
32 Q62702-A826
Pin Configuration Package1)
Cerec-X
Maximum Ratings
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Operating temperature range
Symbol
VR
IF
Tj
Tstg
Top
Values
Unit
6.5 V
50 mA
150 ˚C
– 55 … + 150
– 55 … + 150
1) For detailed information see chapter Package Outlines.

     






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