Q62702-A910 Data Sheet PDF | Siemens Semiconductor Group





(Datasheet) Q62702-A910 PDF Download

Part Number Q62702-A910
Description Silicon Switching Diodes (Switching applications High breakdown voltage)
Manufacture Siemens Semiconductor Group
Total Page 3 Pages
PDF Download Download Q62702-A910 Datasheet PDF

Features: Silicon Switching Diodes BAS 78 A … B AS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B BAS 78 C BAS 78 D Marking BAS 78 A BAS 78 B BAS 78 C BAS 78 D Ordering Code (tape and reel) Q62702-A910 Q62702 -A911 Q62702-A912 Q62702-A913 Pin Conf iguration Package1) SOT-223 Maximum R atings Parameter Symbol BAS 78 A Revers e voltage Peak reverse voltage Forward current Peak forward current Surge forw ard current, t = 1 µs Total power diss ipation, TS = 124 ˚C2) Junction temper ature Storage temperature range Thermal Resistance Junction - ambient2) Juncti on - soldering point Rth JA Rth JS ≤ ≤ Values BAS BAS 78 B 78 C 100 100 1 1 10 1.2 150 – 65 … + 150 200 200 Unit BAS 78 D 400 400 A V VR VRM IF I FM IFS Ptot Tj Tstg 50 50 W ˚C 92 2 2 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 78 A … BAS 78 D Electrical Characteristics at TA = 25 ˚C, unless.

Keywords: Q62702-A910, datasheet, pdf, Siemens Semiconductor Group, Silicon, Switching, Diodes, Switching, applications, High, breakdown, voltage, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Q62702-A910 datasheet
Silicon Switching Diodes
q Switching applications
q High breakdown voltage
BAS 78 A
… BAS 78 D
Type
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
Marking
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
Ordering Code
(tape and reel)
Q62702-A910
Q62702-A911
Q62702-A912
Q62702-A913
Pin Configuration
Package1)
SOT-223
Maximum Ratings
Parameter
Symbol
Reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 124 ˚C2)
Junction temperature
Storage temperature range
VR
VRM
IF
IFM
IFS
Ptot
Tj
Tstg
BAS
78 A
50
50
Values
BAS BAS
78 B 78 C
100 200
100 200
1
1
10
1.2
150
– 65 … + 150
BAS
78 D
400
400
Unit
V
A
W
˚C
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
92 K/W
22
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91

Q62702-A910 datasheet   Q62702-A910 datasheet   Q62702-A910 datasheet  






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)