Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series)
Silicon Low Leakage Diode Array
Low-leakage applications q Medium speed switching times q Connected in series
q
BAV 199...
Description
Silicon Low Leakage Diode Array
Low-leakage applications q Medium speed switching times q Connected in series
q
BAV 199
Type BAV 199
Marking JYs
Ordering Code (tape and reel) Q62702-A921
Pin Configuration
Package1) SOT-23
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values 70 70 200 4.5 330 150 – 65 … + 150
Unit V mA A mW ˚C
500 360
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BAV 199
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 70 V VR = 70 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA CD trr – – 2 0.5 – 3 pF
µs
Values typ. max.
Unit
V(BR) VF
70
–
–
V mV
– – – – IR – –
– – – – – –
900 1000 1100 1250 nA 5 80
Test circuit for reverse recovery time
Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω
Oscillograph:
R = 50 Ω tr = 0.35 ns C ≤ 1 pF
Semiconductor Group
2
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