Q62702-A921 Datasheet PDF | Siemens Semiconductor Group





(PDF) Q62702-A921 Datasheet PDF

Part Number Q62702-A921
Description Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series)
Manufacture Siemens Semiconductor Group
Total Page 4 Pages
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Features: Silicon Low Leakage Diode Array Low-leak age applications q Medium speed switchi ng times q Connected in series q BAV 1 99 Type BAV 199 Marking JYs Ordering Code (tape and reel) Q62702-A921 Pin Configuration Package1) SOT-23 Maximu m Ratings per Diode Parameter Reverse v oltage Peak reverse voltage Forward cur rent Surge forward current, t = 1 µs T otal power dissipation, TS = 31 ˚C Jun ction temperature Storage temperature r ange Thermal Resistance Junction - ambi ent2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS P tot Tj Tstg Values 70 70 200 4.5 330 1 50 – 65 … + 150 Unit V mA A mW ˚C 500 360 K/W 1) 2) For detailed inf ormation see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 4 0 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAV 199 Electrical Ch aracteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdow n voltage I(BR) = 100 µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF =.

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Q62702-A921 datasheet
Silicon Low Leakage Diode Array
q Low-leakage applications
q Medium speed switching times
q Connected in series
BAV 199
Type
BAV 199
Marking
JYs
Ordering Code
(tape and reel)
Q62702-A921
Pin Configuration
Package1)
SOT-23
Maximum Ratings per Diode
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 31 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
70 V
70
200 mA
4.5 A
330 mW
150 ˚C
– 65 … + 150
Rth JA
Rth JS
500
360
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91

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