Silicon PIN Diode
BA 886
Silicon PIN Diode
Preliminary Data
q q q
BA 886
Current-controlled RF resistor for switching and attenuating a...
Description
BA 886
Silicon PIN Diode
Preliminary Data
q q q
BA 886
Current-controlled RF resistor for switching and attenuating applications Frequency range above 1 MHz Designed for low IM distortion
Type BA 886
Marking PC
Ordering Code (tape and reel) Q62702-A932
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient2) Rth JA
≤
Symbol VR IF Top Tstg
Values 50 50 – 55 … + 150
Unit V mA
– 55 … + 125 ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
BA 886
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 50 mA Reverse current VR = 50 V Diode capacitance f = 1 MHz, VR = 50 V f= 100 MHz, VR = 0 V Forward resistance f = 100 MHz IF = 10 µA IF = 1 mA IF = 10 mA Zero bias conductance f = 100 MHz, VR = 0 V Series inductance Symbol min. VF IR CT – – rf – – 6.5 gp LS – – 2400 58 7.8 40 2 – – 10 – –
µS
Values typ. – – max. 1.15 50 – –
Unit V nA pF
0.23 0.2
0.35 – Ω
nH
Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz
Forward resistance rf = f (IF) f = 100 MHz
...
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