Q62702-B0825 Datasheet PDF Download, Siemens Semiconductor Group





(PDF) Q62702-B0825 Datasheet Download

Part Number Q62702-B0825
Description Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
Manufacture Siemens Semiconductor Group
Total Page 3 Pages
PDF Download Download Q62702-B0825 Datasheet PDF

Features: BBY 53-03W Silicon Tuning Diode Prelimin ary data • High Q hyperabrupt tuning diode • Designed for low tuning volt age operation for VCO's in mobile commu nications equipment • High ratio at l ow reverse voltage Type BBY 53-03W Ma rking Ordering Code white/5 Q62702-B082 5 Pin Configuration 1=C 2=A Package S OD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operat ing temperature range Storage temperatu re Symbol Values 6 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C VR IF Top T stg Semiconductor Group 1 Sep-11-199 6 BBY 53-03W Electrical Characteristi cs at TA=25°C, unless otherwise specif ied Parameter Symbol min. DC characteri stics Reverse current Values typ. max. Unit IR 10 200 nA VR = 4 V, TA = 25 °C VR = 4 V, TA = 65 °C AC character istics Diode capacitance CT 4.8 1.85 5 .3 2.4 2.2 0.37 0.12 2 5.8 3.1 pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Ca pacitance ratio CT1/CT3 1.8 2.6 Ω p F nH - VR = 1 V, VR = 3 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V.

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Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
BBY 53-03W
Type
BBY 53-03W
Marking Ordering Code Pin Configuration
white/5 Q62702-B0825 1 = C
2=A
Package
SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
VR
IF
Top
Tstg
Values
6
20
- 55 ... + 150
- 55 ... + 150
Unit
V
mA
°C
Semiconductor Group
1
Sep-11-1996

        






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