Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
BB 565
Silicon Variable Capacitance Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low ser...
Description
BB 565
Silicon Variable Capacitance Diode For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure
2
1
VES05991
Type BB 565 BB 565
Marking Ordering Code C C Q62702-B0869 unmatched Q62702-B0873 in-line matched
Pin Configuration Package 1=C 2=A SCD-80
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+150 -55 ...+150 mA °C Unit V
VR VRM IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-13-1998 1998-11-01
BB 565
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200
Unit
IR IR
-
nA
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance
CT
18.5 13.2 1.85 1.8 20 14.8 2.07 2 7.2 10 21.5 16.4 2.28 2.2 8.1 11
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz
Capacitance ratio
CT2/C T25 CT1/C T28
∆CT/C T
6.3 9
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching 1) % 0.5 0.7 0.6 0.6 1.5 2 Ω nH
VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence
Series resistance
rs Ls
-
VR = 3 V, f = 470 MHz
Series inductance
1) In-line matchi...
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