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Q62702-B0880 Dataheets PDF



Part Number Q62702-B0880
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
Datasheet Q62702-B0880 DatasheetQ62702-B0880 Datasheet (PDF)

BB 659C Silicon Variable Capacitance Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 659C BB 659C Marking Ordering Code H H Q62702-B0884 inline matched Q62702-B0880 unmatched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward.

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BB 659C Silicon Variable Capacitance Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 659C BB 659C Marking Ordering Code H H Q62702-B0884 inline matched Q62702-B0880 unmatched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 - 55 ...+150 - 55 ...+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-24-1998 1998-11-01 BB 659C Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200 Unit IR IR - nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 36 27 2.5 2.4 39 30.2 2.72 2.55 11.1 15.3 42 33.2 3.05 2.8 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.5 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/C T - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) % 0.3 0.5 0.6 0.6 1 2 0.7 Ω nH VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence Series resistance rs Ls - VR = 1 V, f = 1 GHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-24-1998 1998-11-01 BB 659C Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 40 pF 1/°C CT 30 T Cc 25 10 -4 20 15 10 5 10 -5 0 10 0 0 5 10 15 20 V 30 10 1 V 10 2 VR VR Reverse current I R = f (VR) T A = Parameter 10 3 85°C pA Reverse current IR = f (TA) VR = 28V 10 3 pA IR 10 2 25°C IR 10 2 10 1 10 1 10 0 10 -1 0 10 10 1 V 10 2 10 0 -30 -10 10 30 50 70 °C 100 VR TA Semiconductor Group Semiconductor Group 33 Jul-24-1998 1998-11-01 .


Q62702-B0875 Q62702-B0880 Q62702-B0884


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