Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units)
BB 837
Silicon Tuning Diode Preliminary data • Extented frequency range up to 2.8 GHz special design for use in TV-sat i...
Description
BB 837
Silicon Tuning Diode Preliminary data Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units High capacitance ratio
Type BB 837
Marking M
Ordering Code Q62702-B0904
Pin Configuration Package 1=C 2=A SOD-323
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 55 ...+150 55 ...+150 mA °C Unit V
Semiconductor Group
1
Mar-27-1998
BB 837
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1V to 28V, f = 1 MHz Capacitance matching VR = 1V to 28V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Series inductance Ls 1.4 nH rs 1.5 Ω ∆CT/CT 5 % CT1/CT28 9.7 12.2 CT1/CT25 CT 6 0.45 6.6 0.55 0.54 12 7.2 0.65 pF
Symbol min. IR IR -
Values typ. max. 10 200
Unit
nA
Semiconductor Group
2
Mar-27-1998
BB 837
Diode capacitance CT = f (VR ) f = 1MHz
10
pF
8
CT
7 6 5 4 3 2 1 0 0 10
1
10
V
VR
Semiconductor Group
3
Mar-27-1998
...
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