Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
BB 644
Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series ind...
Description
BB 644
Silicon Variable Capacitance Diode Preliminary data For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure
Type BB 644 BB 644
Marking Ordering Code yellow 4 yellow 4 Q62702-B0905 group matched Q62702-B0907 unmatched
Pin Configuration Package 1=C 2=A SOD-323
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+150 -55 ...+150 mA °C Unit V
VR VRM IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-09-1998 1998-11-01
BB 644
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 100
Unit
IR IR
-
nA
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance
CT
39 29.4 2.5 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 -
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz
Capacitance ratio
CT2/C T25
11
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
CT1/C T28 15.2
∆CT/C T -
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio 1) % Ω nH
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
rs Ls
VR = 1 V, f = 1 GHz
Series inductance
1) In-line matching. For details please refer to Application Not...
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