Q62702-B479

BB 512 Silicon Variable Capacitance Diode q q BB 512 For AM tuning applications Specified tuning range 1 … 8 V Type BB 512 Ordering Code (tape and reel) Q62702-B479 Pin Configuration 1 2 C A Marking white M Package SOD-123 Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 10 kΩ) Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 12 15 50 – 55 … + 150 Unit V mA – 55 … + 150 ˚C 600 K/W Semiconductor Group 1 10.94 BB 512 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 10 V VR = 10 V, TA = 60 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V Capacitance ratio VR = 1 V, 8 V Series resistance f = 0.5 MHz, VR = 1 V Figure of merit f = 0.5 MHz, VR = 1 V Temperature coefficient of diode capacitance f = 1 MHz, VR = 1 V Capacitance matching VR = 1 … 8 V Symbol min. IR – – CT 440 17.5 CT1 CT8 rs Q TCC ∆CT Values typ. – – 470 – – 1.4 480 500 – max. Unit nA 20 200 pF 520 34 – – – – 3 – Ω – ppm/K % 15 – – – – CT Semiconductor Group 2 BB 512 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction capacitance TCC = f (VR) Semiconductor Group 3 ...