Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I)
BB 640
Silicon Variable Capacitance Diode
q
BB 640
For Hyperband TV/VTR tuners, Bd I
Type BB 640
Ordering Code (tap...
Description
BB 640
Silicon Variable Capacitance Diode
q
BB 640
For Hyperband TV/VTR tuners, Bd I
Type BB 640
Ordering Code (tape and reel) Q62702-B589
Pin Configuration Marking 1 2 C A red S
Package SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 5 kΩ) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
≤
Symbol VR VRM IF Top Tstg
Values 30 35 20 – 55 … + 150
Unit V mA
– 55 … + 150 ˚C
450
K/W
Semiconductor Group
1
02.96
BB 640
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V … 28 V, f = 1 MHz Series resistance CT = 30 pF, f = 100 MHz Series inductance Symbol min. IR – – CT 62 2.9 CT1 CT28
∆CT
Values typ. – – max.
Unit nA 10 200 pF
– – – – 1.15 2
76 3.4 25 2.5 – – – % Ω nH
19.5 – – –
CT rs LS
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
2
...
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