Q62702-B695

BB 639C Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners Type BB 639C Marking Ordering Code yellow S Q62702-B695 Pin Configuration Package 1=C 2=A SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+125 -55 ...+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group 1 Apr-30-1998 BB 639C Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 200 nA Unit IR IR - VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 36 27 2.5 2.4 39 30.2 2.72 2.55 11.1 15.3 0.6 1.8 42 33.2 3.05 2.8 2.5 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.5 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/CT - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching % Ω nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group 2 Apr-30-1998 BB 639C Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 40 pF 1/°C CT 30 T Cc 25 10 -4 20 15 10 5 10 -5 0 10 0 0 5 10 15 20 V 30 10 1 V ...