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Q62702-B70

Siemens Semiconductor Group

Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design)

Silicon Tuning Varactor q BBY 33 BB-2 Tuning varactor in passivated Mesa technology (epitaxial design) Type BBY 33 BB...


Siemens Semiconductor Group

Q62702-B70

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Silicon Tuning Varactor q BBY 33 BB-2 Tuning varactor in passivated Mesa technology (epitaxial design) Type BBY 33 BB-2 Marking – Ordering Code Q62702-B70 Pin Configuration Cathode: black dot, heat sink Package1) C1 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 27 200 175 – 55 … + 150 – 55 … + 150 Unit V mA ˚C 1) For detailed information see chapter Package Outlines. BBY BBY33 33BBBB-2 2 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 200 mA Reverse current VR = 15 V Diode capacitance VR = 0 Capacitance ratio VR = 0, VR = 25 V Figure of merit VR = 4 V, f = 50 MHz Symbol min. VF IR CT CT0 CT25 Q(min) – – 0.9 – 4000 Values typ. – – – 3.0 – max. 1.1 5 1.5 – – V nA pF – – Unit ...




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