Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
BBY 57-02W
Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series in...
Description
BBY 57-02W
Silicon Tuning Diode Preliminary data Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio Designed for low tuning voltage operation for VCO’s in mobile communications equipment For control elements such as TCXOs and VCXOs
2
1
VES05991
Type BBY 57-02W
Marking 5
Ordering Code Q62702-B915
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-30-1998 1998-11-01
BBY 57-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 1 100 nA Unit
IR IR
-
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
AC characteristics Diode capacitance
CT
16.5 4 17.5 8.7 7.1 4.73 2.45 3.7 0.3 0.09 0.6 18.6 5.5 4.5 -
pF
VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T3 CT1/C T4 rs CC Ls
3 -
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-30-1998 1998-11-01
BBY 57-02W
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = ...
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