PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage)
PNP Silicon AF and Switching Transistors
For general AF applications q High breakdown voltage q Low collector-emitter sa...
PNP Silicon AF and Switching
Transistors
For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BCX 41, BSS 64 (
NPN)
q
BCX 42 BSS 63
Type BCX 42 BSS 63
Marking DKs BMs
Ordering Code (tape and reel) Q62702-C1485 Q62702-S534
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 100 110 5
Values BSS 63 BCX 42 125 125 5 800 1 100 200 330 150 – 65 … + 150
Unit V
mA A mA mW ˚C
285 215
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCX 42 BSS 63
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 42 BSS 63 Collector-base breakdown voltage1) IC = 100 µA BCX 42 BSS 63 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 80 V VCB = 100 V VCB = 80 V, TA = 150 ˚C VCB = 100 V, TA = 150 ˚C Collector cutoff current VCE = 100 V TA = 85 ˚C TA = 125 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC...
