NPN Silicon AF Transistors
BCW 65 BCW 66
For general AF applications q High current gain q Low collector-emitter satur...
NPN Silicon AF
Transistors
BCW 65 BCW 66
For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (
PNP)
q
Type BCW 65 A BCW 65 B BCW 65 C BCW 66 F BCW 66 G BCW 66 H
Marking EAs EBs ECs EFs EGs EHs
Ordering Code (tape and reel) Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 65 BCW 66
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BCW 65 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 60 5
Values BCW 66 45 75 5 800 1 100 200 330 150 – 65 … + 150
Unit V
mA A mA mW ˚C
285 215
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 65 BCW 66
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA =...
