Q62702-C1681 current gain Datasheet

Q62702-C1681 Datasheet, PDF, Equivalent


Part Number

Q62702-C1681

Description

PNP Silicon AF Transistors (For general AF applications High current gain)

Manufacture

Siemens Semiconductor Group

Total Page 6 Pages
Datasheet
Download Q62702-C1681 Datasheet


Q62702-C1681
PNP Silicon AF Transistors
q For general AF applications
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BCW 65, BCW 66 (NPN)
BCW 67
BCW 68
Type
BCW 67 A
BCW 67 B
BCW 67 C
BCW 68 F
BCW 68 G
BCW 68 H
Marking
DAs
DBs
DCs
DFs
DGs
DHs
Ordering Code
(tape and reel)
Q62702-C1560
Q62702-C1480
Q62702-C1681
Q62702-C1893
Q62702-C1322
Q62702-C1555
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91

Q62702-C1681
Maximum Ratings
Parameter
Symbol
BCW 67
Values
BCW 68
Collector-emitter voltage
VCE0
32
45
Collector-base voltage
VCB0
45
60
Emitter-base voltage
VEB0
5
5
Collector current
IC
800
Peak collector current
ICM
1
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 79 ˚C Ptot
330
Junction temperature
Tj
150
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Rth JA
Rth JS
285
215
BCW 67
BCW 68
Unit
V
mA
A
mA
mW
˚C
K/W
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2


Features PNP Silicon AF Transistors BCW 67 BCW 6 8 For general AF applications q High c urrent gain q Low collector-emitter sat uration voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A B CW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H Marking DAs DBs DCs DFs DGs DHs Ordering Code (tape and reel) Q62702-C1 560 Q62702-C1480 Q62702-C1681 Q62702-C1 893 Q62702-C1322 Q62702-C1555 Pin Conf iguration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chap ter Package Outlines. Semiconductor Gr oup 1 5.91 BCW 67 BCW 68 Maximum Ra tings Parameter Collector-emitter volta ge Collector-base voltage Emitter-base voltage Collector current Peak collecto r current Base current Peak base curren t Total power dissipation, TS = 79 ˚C Junction temperature Storage temperatur e range Thermal Resistance Junction - a mbient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 67 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 45 5 Values BCW 68 45 60 5 800 1 100 200 330 150 – 65 … + 150 Uni.
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