PNP Silicon Darlington Transistors (For general AF applications High collector current)
PNP Silicon Darlington Transistors
BCV 28 BCV 48
For general AF applications q High collector current q High current g...
PNP Silicon Darlington
Transistors
BCV 28 BCV 48
For general AF applications q High collector current q High current gain q Complementary types: BCV 29, BCV 49 (
NPN)
q
Type BCV 28 BCV 48
Marking ED EE
Ordering Code (tape and reel) Q62702-C1852 Q62702-C1854
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-89
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BCV 28 30 40 10
Unit BCV 48 60 80 10 500 800 100 200 1 150 – 65 … + 150 W ˚C mA V
72 17
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCV 28 BCV 48
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 28 BCV 48 Collector-base breakdown voltage IC = 100 µA BCV 28 BCV 48 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 28 BCV 4...
