NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit)
BCR 112
NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias ...
BCR 112
NPN Silicon Digital
Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ)
Type BCR 112
Marking Ordering Code WFs Q62702-C2254
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 15 100 200 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 350 ≤ 240
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Nov-26-1996
BCR 112
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 4.7 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
1
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
R1 R1/R2
3.2 0.9
AC Characteristics Transition freque...