NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit)
BCR 148S
NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (ga...
BCR 148S
NPN Silicon Digital
Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvaniv) internal isolated
Transistors driver circuit Built in bias resistor (R1=47kΩ, R2=47KΩ)
Type BCR 148S
Marking Ordering Code Pin Configuration WEs
Package
Q62702-C2417 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 10 50 70 250 150 - 65 ... + 140 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 275 ≤ 140
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Nov-26-1996
BCR 148S
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 47 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
1
IC = 2 mA, VCE = 0.3 V
In...